ZnO

Zhiyuan Ren1, Shan Wang1, Bingheng Meng1,2

  • 1Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China.

PubMed
概括

这项研究将氧化 (ZnO) 突触中的原子缺陷与它们的神经形态性能联系起来. 工程这些缺陷优化突触重量用于应用程序,如人工视觉硬件.

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