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Updated: Jan 14, 2026

Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
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Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis

Published on: March 29, 2016

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一个哈尔丹-安德森哈密尔顿模型,用于从半导体表面的高热散射

Xuexun Lu1, Nils Hertl1,2, Sara Oregioni3

  • 1Department of Chemistry, University of Warwick, Gibbet Hill Road, CV4 7AL Coventry, United Kingdom.

The Journal of chemical physics
|January 13, 2026
PubMed
概括

半导体表面的原子散射显示能量转移仅在带隙以上. 新的模拟揭示了独立电子的表面跳跃捕捉了这种非adiabatic能量消散,与更简单的模型不同.

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