相关实验视频

Updated: Jun 14, 2026

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

10.1K

在Epitaxial中工程谷物架构在Miscut基板上,朝着各种清洁极限和巨型超导度调制

Thi-Hien Do1, Pei-Tzu Wu2, Yu-Yao Gao1

  • 1Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.

Small (Weinheim an der Bergstrasse, Germany)
|January 14, 2026
PubMed
概括

控制 (Al) 颗粒架构与基板误切显著影响其超导性. 这项研究提供了一种可调节的方法,用于为先进设备优化Al纳米膜.

关键词:
在错误切割基板上的表轴.聚晶合金是多晶的.一个单晶的.超导性调制的超导性调制方法双胞胎制成的.

更多相关视频

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.7K
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

15.8K

相关概念视频

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...