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Updated: Jan 15, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
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加速发现纳米级互连的拓导体

Alexander C Tyner1,2, William Rogers3, Po-Hsin Shih4

  • 1NORDITA, KTH Royal Institute of Technology and Stockholm University, Stockholm, Sweden.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 14, 2026
PubMed
概括

拓半金属为铜互连提供了一个有希望的解决方案.

关键词:
DFT计算的计算方法互联网互联网连接机器学习是机器学习.运输纳米线的运输方式拓导体 拓导体是指拓导体.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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