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Hao-Wen Xu1, Wen-Cheng Fan1, Jun-Ding Zheng1
1Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, and Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai 200241, China.
接口铁电使用域墙 (DWs) 为内存设备. 不同的DW类型影响着极化稳定性和切换可逆性,指导着未来的纳米电子.
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