几乎不易挥发的无电容DRAM,基于超低泄漏边接触式MoS2晶体管
Saifei Gou1, Yuxuan Zhu1, Zhejia Zhang1
1State Key Laboratory of Integrated Chip and Systems, School of Microelectronics, Fudan University, Shanghai, People's Republic of China.
Nature materials
|January 14, 2026
概括
在二维半导体如二硫化物 (MoS2) 中,边缘接触工程是通过现场多步骤工艺进行的. 这种方法显著减少了晶体管的泄漏电流,并为未来的电子产品提供了高性能内存设备.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 电气工程 电气工程
背景情况:
- 二维 (2D) 半导体是后穆尔计算的关键.
- 接触工程,特别是边缘接触,在优化设备性能方面面临着挑战.
研究的目的:
- 开发一个现场的多步骤过程,以改善2D半导体的边缘接触工程.
- 为了克服当前状态,值电压和状态外泄漏的限制.
主要方法:
- 使用定制设计的高真空室进行序列蚀刻,等离子处理和金属沉积.
- 制造的基于二硫化 (MoS2) 的边缘接触场效应晶体管 (FET).
主要成果:
- 在零门电压下达到超低的泄漏电流 (1.75 × 10−20 A μm−1).
- 在MoS2 FET中证明了增强的现状电流.
- 开发了优化的无电容双晶体管动态随机存取存储器 (DRAM),具有准非挥发性操作.
结论:
- 在现场的过程最大限度地减少了接口缺陷,使得优越的边缘接触性能.
- 开发的DRAM具有很高的内存精度和纳米秒写入速度.
- 突出了2D半导体在先进电子电路和内存应用中的潜力.
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