基于n-AlGaN的孔电流封闭层增强了基于GaN的VCSEL的性能
Optics letters
|January 15, 2026
概括
一个新的n型AlGaN孔电流封闭层 (HCCL) 有效地封闭了基于化的垂直腔表面发射激光器 (VCSEL) 中的孔. 这种设计显著提高了光学输出功率和壁插头效率,同时降低了门电流.
科学领域:
- 半导体物理 半导体物理
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
背景情况:
- 基于化 (GaN) 的垂直腔表面发射激光器 (VCSEL) 面临着运载体限制不足的挑战,导致孔泄漏.
- 这种泄漏会对设备性能产生负面影响,包括光学输出功率和效率.
研究的目的:
- 在基于GaN的VCSEL中设计和实施n型酸 (AlGaN) 孔电流封闭层 (HCCL).
- 为了减轻漏洞泄漏,并增强活跃区域内的载体限制.
主要方法:
- 利用模拟来设计一个包含p-GaN和n-Al0.15Ga0.85N的异构结构.
- 分析了能量屏障和价值带曲,以寻找横向和垂直方向的孔.
- 评估了HCCL对光学输出功率,值电流和壁插头效率的影响.
主要成果:
- 该p-GaN/n-Al0.15Ga0.85N异构结构为洞形成了重要的能量屏障,最大限度地降低了价值带曲.
- 在p型区域中改善的孔封闭提高了载体注入和重组效率.
- 在10 mA的注入电流下,光学输出功率增加了37.8%,值电流减少了0.6 mA,墙插电效率提高了32%.
结论:
- n-AlGaN HCCL有效调节带结构,以改善基于GaN的VCSEL中的载体限制.
- 这种方法提供了一个可行的策略来提高基于GaN的VCSEL设备的整体性能.
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