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Updated: May 6, 2026

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
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HAXPES引导的埋藏接口工程使得低发作潜力Ta3N5光电解极成为可能

Beibei Zhang1, Zilong Zhu1, Jianzan Cai1

  • 1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China.

Nano letters
|January 16, 2026
PubMed
概括

工程师优化了化 (Ta3N5) 光电极,通过用化 (NbN) 的中间层设计埋葬的连接点. 这一策略改善了电子提取,以实现高效的太阳能水分解,实现了创纪录的效率.

关键词:
哈克斯佩斯 (HAXPES) 是一个斯科特基屏障是一个障碍.时间3N5N5埋葬的接口接口摄影电极 (Photoanode) 是一个光电极.光电化学水分离器的使用

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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