在Mo插入的Mg复合材料自由层中具有高垂直异位性,用于4K-400K通用温度应用中的非挥发性磁力复原性随机访问存储器
Ming-Chun Hong1,2, Chen-Yu Yang1,2, Hsin-Han Lee2
1Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
Small (Weinheim an der Bergstrasse, Germany)
|January 17, 2026
概括
这项研究介绍了一种通用温度友好型非挥发性MRAM (UTF-NVMRAM),可以克服旋转转移扭矩磁力定随机访问存储器 (STT-MRAM) 的温度灵敏性挑战. 新设计可确保在广泛的温度范围内 (4-400K) 提供可靠的性能,用于先进的非挥发性内存应用.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体设备 半导体设备
背景情况:
- 在各种应用中,对非易失性内存 (NVM) 的需求正在增加.
- 旋转传递扭矩磁性随机访问存储器 (STT-MRAM) 是一个可扩展的NVM解决方案,但面临着温度敏感性影响开关电压 (VSW) 和热稳定性 (Δ) 的挑战.
研究的目的:
- 引入基于STT-MRAM技术的通用温度友好型非挥发性MRAM (UTF-NVMRAM).
- 在VSW和Δ中最大限度地降低温度灵敏度,以便在4K和400K之间可靠运行.
- 为了确保与后端线回火工艺的兼容性.
主要方法:
- 优化了MgO/MgOx封闭层. 优化了MgO/MgOx封闭层.
- 嵌入的 (Mo) 在一个无复合物层 (CFL) 与一个Mg间隔器.
- 在设备设计中使用STT-MRAM框架.
主要成果:
- 实现了低VSW的灵敏度 (VSW/T ≈ 0.68 mV/K) 和低Δ的灵敏度 (Δ/T ≈ 0.1/K).
- 已证明保留时间超过10年,写错率低于1ppm,操作速度为10ns,在整个温度范围内的耐用性>1011周期.
- 在不影响磁阻比或切换电流的情况下保持了很大的写入边缘.
结论:
- 在关键性能指标中,UTF-NVMRAM表现出最小的温度灵敏度.
- 开发的NVMRAM适用于广泛的温度应用,基于商业化的STT-MRAM提供了一个有前途的解决方案.
- 该设计确保了高性能,可靠性和与制造工艺的兼容性.
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