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Updated: Jan 18, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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鼻状位移描述了CsPbBr3纳米晶超级格子中的障碍

Umberto Filippi1,2, Stefano Toso3,4, Matheus Gomes Ferreira3

  • 1Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.

ACS nano
|January 17, 2026
PubMed
概括

纳米晶体超级网中的障碍被用X射线散射来研究. 一个新的正弦位移模型解释了粒子软度如何影响这些先进材料的结构连贯性和混乱传播.

关键词:
结合体软度 结合体软度 结合体软度这是一种混乱的混乱,一种混乱的混乱.吉萨克斯地区 吉萨克斯地区吉瓦克斯 (GIWAXS) 是一种合物化物佩罗夫斯基特是一种化物.纳米晶体纳米晶体的使用这是一个超级网格.

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