晶圆尺度高-κ HfO2介电薄膜,其氧化物厚度为2D MoS2晶体管等同于-5-Å
Songge Zhang1,2,3, Tao Zhang1,4, Hua Yu1
1Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Nature communications
|January 20, 2026
概括
研究人员使用原子层沉积开发了超薄的氧化 (HfO2) 门介电剂. 这些高-κ介电材料达到2.5 Å的低等效氧化物厚度 (EOT),从而实现了先进的晶体管性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术纳米技术
背景情况:
- 高-κ 门介电材料对于现代晶体管至关重要,可实现高效的关闭和减少泄漏.
- 实现行业兼容的低于5 Å相当氧化物厚度 (EOT) 的高κ介电是个重大挑战.
研究的目的:
- 实现超薄,行业兼容的高-k门介电材料.
- 为了证明它们的集成到先进的半导体设备,如2D晶体管.
主要方法:
- 在200°C使用多氧化原子层沉积 (ALD) 工艺,沉积1.3纳米厚的氧化 (HfO2) 介电材料.
- 整合了HfO2介电器与金属门,用于晶体管制造.
主要成果:
- 达到2.5 Å的低EOT,泄漏电流为10−6 A/cm2和~22.3 MV/cm的故障电场.
- 在8英寸晶圆尺度上成功集成到二硫化 (MoS2) 晶体管中.
- 莫斯2晶体管表现出高的开/关比 (108),大开状态电流 (260μA/μm),以及出色的下值斜率 (75 mV/dec).
结论:
- 开发的超大规模HfO2介电材料对下一代半导体制造有很大的前景.
- 这些介电材料为先进的低功耗逻辑电路和勃发展的2D晶体管在安格斯特罗姆时代铺平了道路.
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