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使用绿色 (515 nm) femtosecond激光器进行高保真度芯片延迟

Mohammad Taghi Mohammadi Anaei¹, Matthew Maniscalco^1,2, Hongbin Choi¹

¹University of Connecticut, Storrs, CT, USA.

Scientific reports

|January 20, 2026

概括

一种新的绿色激光延迟方法提供了更快,更一致的半导体芯片分析. 这种技术提高了层层的清晰度,并减少了碎片,以便更好地进行硬件诊断和逆向工程.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

准确的半导体芯片金属层重建对于硬件支持,验证和分析至关重要.
像机械抛光,化学蚀刻和聚焦离子束 (FIB) 延迟等传统方法是缓慢的,不一致的和资源密集的.
现有的激光延迟方法面临的挑战是选择性材料相互作用和不均的剥离.

研究的目的:

开发一种精简,高效和可重复的半导体芯片延迟方法.
研究使用绿色 (515 nm) 激光来改善芯片层的去除.
为了增强用于诊断和逆向工程的高保真度芯片分析.

主要方法:

开发了一种简化方法,将基于激光的延迟与高分辨率的多模式显微镜相结合.
研究并优化了绿色 (515 nm) 激光器用于芯片延迟的使用.
使用共聚焦显微镜和扫描电子显微镜 (SEM) 进行比较成像,并使用能量分散式X射线光谱 (EDS) 进行材料分析.

主要成果:

使用绿色激光实现了显著更清洁的延迟和基础芯片结构的更好的曝光.
对材料变化的敏感性有所降低,使层层去除更加均和可控.
与传统方法相比,观察到层层清晰度的显著改善和明显的碎片减少.

结论:

绿色激光延迟方法为传统技术提供了更有效和可重复的替代方案.
这种方法提高了芯片分析的质量,为高保真性诊断和逆向工程提供了潜力.
优化的绿色激光参数带来了卓越的层清晰度和最小的碎片,推进了半导体分析工作流程.

关键词:

在3D成像中使用3D成像.设计重建设计重建五秒激光激光的使用时间为5秒.多式联络调查多式联络调查设备的延迟器件延迟器件

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