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Updated: Apr 27, 2026

Atomically Traceable Nanostructure Fabrication

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

"N₂/H₂的收缩为SiO₂的等离子增强原子层沉积缺口填充:对半导体制造中的纳米电子学的影响"

Sameh Okasha, Donald Munson, Jun Yoshikawa

ACS applied nano materials

|January 21, 2026

概括

这篇文章已被撤回. 科学界不再认为先进材料的原始研究是有效的.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

关于新型纳米材料的先前研究已经发表.

研究的目的:

为了收回该文章的DOI: 10.1021/acsanm.4c06844.

主要方法:

已发出撤销通知.

主要成果:

这篇文章已正式撤回.

结论:

科学记录已经更新,以反映收回.

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Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

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