在3D垂直电阻式内存阵列中的表面增强散热,具有顶部选择器晶体管
Arman Kadyrov1, Seunghyun Lee1, Batyrbek Alimkhanuly1
1Department of Electronic Engineering, Kyung Hee University, Yongin 17104, Republic of Korea. seansl@khu.ac.kr.
Nanoscale horizons
|January 22, 2026
概括
在3D电阻随机存储器 (RRAM) 中优化选择器晶体管的定位可以减少AI加速器中的热积累. 这种热管理可以提高堆叠内存阵列的能效和可靠性.
科学领域:
- 半导体设备物理学 半导体设备物理
- 人工智能硬件是人工智能的硬件.
- 电子产品中的热管理.
背景情况:
- 3D内存集成,像高带宽内存 (HBM),可以提高AI加速器的性能.
- 堆叠的3D内存结构阻碍了散热,导致热问题.
- 电阻随机访问存储器 (RRAM) 提供了能源效率,但在堆叠的数组中面临着热挑战.
研究的目的:
- 分析选择器晶体管配置对3D RRAM热积累的影响.
- 研究在神经形态系统中AI计算过程中减轻热量生成的方法.
- 为了提高密集堆叠的内存层的热管理和可靠性.
主要方法:
- 在微型制造的3DRRAM结构中对选择器晶体管配置进行比较分析.
- 使用来自实验RRAM设备的功率参数.
- 使用有限元模拟和数值计算进行热分析.
主要成果:
- 选择器晶体管在内存接口的最佳位置可将纳米级热积累降低高达11%.
- 模拟验证了当地高峰温度的显著降低,从160°C以上降至60°C以下,在20纳米秒内.
- 在10到100个叠叠层的配置中,有效的热管理得到了证明.
结论:
- 选择器晶体管的定位对于AI的3DRRAM中的热管理至关重要.
- 改进的热设计提高了功率效率,并减少了神经形态计算中的计算错误.
- 这项研究为更可靠,更高效的堆叠内存架构提供了途径.
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