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Updated: Jan 24, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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多功能化介导结晶和缺陷被动化为2D基于Sn的矿薄膜晶体管的多功能化

Huimin Su1, Shuguang Zhang1, Kangxin Shen1

  • 1State Key Laboratory of Luminescent Materials and Devices School of Materials Science and Engineering, South China University of Technology, Guangzhou, China.

Small (Weinheim an der Bergstrasse, Germany)
|January 23, 2026
PubMed
概括

氨酸化物 (Cy-F) 通过提高薄膜质量和抑制缺陷来增强基于锡的矿薄膜晶体管 (TFT). 这导致这些环保半导体设备的移动性和操作稳定性显著提高.

关键词:
缺陷被动化 缺陷被动化现场效应移动性的移动性多功能添加剂多功能添加剂薄膜晶体管的薄膜晶体管是什么基于锡的化物矿矿.

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