旋波束在单轴晶体中的场元件调制是由角度和拓电荷依赖驱动的
Aldsoky Albadry1, Mamdouh Shams El-Din2, Mohamed Nawareg2
1Department of Physics, Faculty of Science, Damietta University, Damietta, 34511, Egypt. aldsokyalbadry@du.edu.eg.
我们研究了旋-高斯光束如何通过鲁晶体传播. 波束属性,如极化和场成分,根据晶体而变化.
科学领域:
- 光学和光子学 在光学和光子学.
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- -高斯光束具有独特的极化特性.
- 单轴晶体表现出异构的光学行为.
研究的目的:
- 为了研究状高斯束在鲁晶体中的传播动力学.
- 为了绘制传播角度和拓电荷对光束特征的影响.
主要方法:
- 使用全向量数值模型进行模拟.
- 分析了横向和纵向电场组件.
- 检查了相分布和拓电荷效应.
主要成果:
- 角度和拓电荷 (M) 显著调节电场元件.
- 场元件随着M的增加而可预测地放大.
- 纵向元件显示了M-依赖的振荡;横向元件的峰值接近平行传播.
- 异位变性减少了纵向场相线绕.
结论:
- 传播角度,晶体异构性和电荷共同塑造了光的矢量结构.
- 这些发现与光学操纵和光束生成应用有关.
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