脉冲调节氧化蚀刻转换可控制的表面图案与原子层精度的原子层精度
Qi Sun1, Bingchun Jia1, Sidong Wu1
1State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, Zhejiang Province 310058, China.
ACS applied materials & interfaces
|January 27, 2026
概括
脉冲偏差可以精确控制原子级氧化和碳化物表面的蚀刻. 扫描探针光刻技术的这一突破为先进的半导体设备制造提供了新的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
- 纳米技术纳米技术
背景情况:
- 扫描探针光刻对于设备制造至关重要,但由于复杂的界面反应而遭受不受控制的氧化和蚀刻.
- 控制氧化和蚀刻之间的过渡的基本机制尚不清楚,这阻碍了有效的控制.
研究的目的:
- 为了研究脉冲偏差在扫描探头光刻画期间控制界面反应中的作用.
- 阐明氧化与碳化表面原子级蚀刻之间的过渡机制.
主要方法:
- 在扫描探头光刻画中利用脉冲偏差来操纵离子运输和电子转移.
- 执行密度函数理论 (DFT) 和电子结构计算来分析反应路径和能量障碍.
- 采用高角度环状暗场扫描传输电子显微镜 (HAADF-STEM) 来评估结构完整性.
主要成果:
- 通过调整脉冲参数,在4H-SiC (0001) 表面上展示了可调节的原子级氧化和蚀刻模式.
- DFT的计算显示,偏差驱动的电荷转移调节了过渡状态的能量障碍和Si-C债券强度.
- 通过HAADF-STEM在蚀刻区域中证实完整的格子结构没有地下损伤.
结论:
- 脉冲偏差有效调节离子运输和电子转移之间的竞争,使选择性氧化或蚀刻成为可能.
- 提供了对原子级氧化和蚀刻机制及其可调节过渡的理论见解.
- 这些发现对制造具有更高性能和稳定性的先进宽带间隙半导体设备具有重大意义.
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