优化方法用于协同控制DRIE过程参数在侧墙度和视角比上的协同控制
Dandan Wang1, Cheng Lei1, Pengfei Ji1
1State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies, North University of China, Taiyuan 030051, China.
深度反应离子蚀刻 (DRIE) 过程参数被优化,以改善微加工中的侧墙角和面积比控制. 动态底部射频功率调整和被动化到蚀刻时间比率是高精度制造的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 物理 物理学 物理
背景情况:
- 深度反应离子蚀刻 (DRIE) 对于微加工至关重要.
- 高精度应用面临着侧墙角度偏差和侧面比率限制的挑战.
研究的目的:
- 研究DRIE工艺参数与蚀刻形态学的关系.
- 为了优化参数,改善侧墙垂直度,面积比和CD均性.
主要方法:
- 系统地调查C4F8被动化时间,底部射频功率,蚀刻周期数量和单步时间.
- 分析它们对侧墙角,面积比和上下CD差异的影响.
主要成果:
- 动态底部射频功率调整显著影响侧墙角度;增量调整降低精度,而减量调整形成 obtuse 角度.
- 单独增加循环数就限制了蚀刻深度;与增量射频功率相结合,可以克服这一问题,但会影响光圈尺寸.
- 优化的被动化到蚀刻时间比控制了蚀刻形态,实现了112.2微米的蚀刻深度,对于5微米的沟,0.279微米的孔径尺寸差异.
结论:
- 参数优化,特别是底部动态射频功率调整和被动化到蚀刻时间比,对于高精度的DRIE至关重要.
- 提供了使用DRIE制造高精度结构的理论基础和实际指导.
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