在射频CMOS设备中堆叠的金属绝缘体金属电容器的射频特征
Tae Min Choi1, Hwa Rim Lee1, Sung Gyu Pyo1
1School of Integrative Engineering, Chung-Ang University, Seoul 156-756, Republic of Korea.
Micromachines
|January 28, 2026
概括
这项研究改进了RF CMOS技术中堆叠金属绝缘体金属 (MIM) 电容器的射频 (RF) 模型. 一个改进的等效电路模型证明了高精度,即使在高频率.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
背景情况:
- 堆叠的金属绝缘体-金属 (MIM) 电容器是射频 (RF) 互补金属氧化物半导体 (CMOS) 技术中的关键组件.
- 精确的MIM电容器建模对于高频电路设计和性能优化至关重要.
- 现有的射频模型可能无法完全捕捉堆叠的MIM结构的复杂特征.
研究的目的:
- 为了研究和描述堆叠的MIM电容器的射频性能.
- 为了比较各种不同的去嵌入技术,以准确地测量提取.
- 为堆叠的MIM电容器开发和验证一个改进的RF等效电路模型.
主要方法:
- 验证除嵌入方法,包括单步 (开/短) 和双步 (开/短) 除嵌入.
- 应用三阶段的去嵌入,使用一个通过模式进行精确的测量.
- 基于测量的S参数和Y参数,构建和分析一个修改的等效电路.
主要成果:
- 该研究系统地比较了堆叠的MIM电容器的不同去嵌入策略.
- 一个修改的等效电路模型是基于两步的去嵌入测量而开发的.
- 拟议的模型在广泛的频率范围内预测射频特征,包括电容和质量因子,具有很高的准确性.
结论:
- 与现有模型相比,开发的修改后的射频模型为堆叠的MIM电容器提供了更高的准确性.
- 改进的模型即使在高频频段也保持了准确性,这对于先进的射频应用至关重要.
- 这项工作有助于更可靠地设计和模拟使用堆叠的MIM电容器的RF CMOS电路.
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