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Updated: Jan 29, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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Ni/β-Ga2O3的光导增益行为 基于肖特基屏障二极管的紫外线探测器

Viktor V Kopyev1, Nikita N Yakovlev1, Alexander V Tsymbalov1

  • 1Research and Development Centre for Advanced Technologies in Microelectronics, National Research Tomsk State University, 634050 Tomsk, Russia.

Micromachines
|January 28, 2026
PubMed
概括

这项研究详细介绍了一种新的/β-氧化物Schottky屏障二极管,它对深紫外线具有很高的敏感性,用于先进的光电探测器应用.

关键词:
氧化的氧化.内部收益 内部收益自动供电模式 自动供电模式紫外线光二极管是紫外线的光二极管.

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