在完整的VG/VD偏差空间中加权的NBTI/HCD合模型与SRAM老化模拟的应用
Micromachines
|January 28, 2026
概括
一个新的合模型准确地预测了SRAM电路中由于负偏差温度不稳定性 (NBTI) 和热载体降解 (HCD) 的老化. 这种先进的模拟工具提高了纳米级集成电路的可靠性.
科学领域:
- 半导体设备物理学的物理
- 集成电路可靠性 集成电路可靠性
- 纳米电子产品的电子产品
背景情况:
- 负偏差温度不稳定性 (NBTI) 和热载体降解 (HCD) 是半导体设备的关键衰老机制.
- 对这些现象的准确建模对于预测静态随机存储器 (SRAM) 电路的长期可靠性至关重要.
研究的目的:
- 开发一个结合NBTI/HCD故障模型,用于SRAM老化模拟.
- 建立基于物理机制的NBTI和HCD修订后的降解模型.
- 创建一个2D电压平面模型,包括合效应,交流效应和和行为.
主要方法:
- 开发了使用反应扩散和热载体能量驱动理论对NBTI和HCD进行修订的值电压转移 (∆Vth) 降解模型.
- 在2D {VG,VD} 电压平面上构建了一个合的NBTI/HCD模型,并具有功率法权重因子.
- 将AC效应和长期和纳入模型.
主要成果:
- 该模型显示,与实验数据相比,∆Vth的平均相对误差为11.6%.
- 在SRAM电路模拟中,读静电噪声边缘 (RSNM) 的最大绝对误差为4.2%,写静电噪声边缘 (WSNM) 的最大误差为3.1%.
结论:
- 拟议的结合NBTI/HCD模型为SRAM电路老化提供了准确的预测.
- 这项研究为纳米级集成电路的可靠性模拟提供了有价值的工具.
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