在130nm CMOS 处理器上进行总电离剂量效应模拟研究
Yi Liu1, Yuchen Liu2, Xinfang Liao3
1Shenzhen Institute of Technology, Xidian University, Shenzhen 518000, China.
Micromachines
|January 28, 2026
概括
这项研究模拟了对130nm LEON2处理器的总电离剂量 (TID) 影响. 它揭示了处理器的故障值和机制,指导大量CMOS处理器的设计辐射硬化 (RHBD).
科学领域:
- 半导体设备物理学 半导体设备物理
- 电子产品中的辐射效应.
- 集成电路设计 集成电路设计
背景情况:
- 总电离剂量 (TID) 影响对微电子设备的可靠性构成重大威胁.
- 了解晶体管中TID诱导的泄漏电流对于预测系统级故障至关重要.
- 在各种应用中广泛使用SMIC 130nm批量CMOS技术,需要进行辐射性能分析.
研究的目的:
- 在SMIC 130nm LEON2处理器上对TID效应进行系统级模拟.
- 为NMOS晶体管开发一个紧的模型,考虑TID诱导的泄漏电流.
- 为了确定处理器的故障值,故障机制和电源电流在辐射下的行为.
主要方法:
- 使用Sentaurus TCAD进行130nm NMOS晶体管的设备级模拟.
- 为TID诱导的泄漏电流开发一个Verilog-A紧型号.
- 将紧型号集成到SPICE网络列表中,用于LEON2处理器的系统级模拟.
主要成果:
- 该研究确定了在TID.下LEON2处理器的故障值和故障机制.
- 观察到电源电流随着辐射剂量的增加而增加.
- 开发的紧型号准确地描述了NMOS晶体管中TID诱导的泄漏电流.
结论:
- 系统级模拟方法为130nm批量CMOS处理器的辐射性能提供了宝贵的见解.
- 这些发现可以指导辐射性能评估和实施辐射硬化通过设计 (RHBD) 策略.
- 准确的紧型建模对于预测系统级辐射效应至关重要.
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