在纯中,在电子辐射下,晶体定向对脱位环演变的影响
Yupeng Yin1, Qianfei Feng1, Wentuo Han1,2
1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Materials (Basel, Switzerland)
|January 28, 2026
概括
高能电子辐射会在航天器中产生缺陷. <111>脱位环比<110>环具有更高的间位原子密度,这对于提高材料对太空辐射的抗性至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 核工程 核工程是指核工程.
- 航空航天工程 航空航天工程
背景情况:
- 航天器结构材料面临着低地球轨道的高能电子辐射.
- 辐射会引起严重的损伤,影响航天器组件的完整性.
- 了解缺陷特征对于提高材料抗辐射能力至关重要.
研究的目的:
- 分析不同晶体学方向的纯中的辐射缺陷特征.
- 为了比较<111>和<110>位移环中的间隙原子密度 (IAD).
- 为了确定晶体学方向和值位移能量之间的关系 (编辑).
主要方法:
- 在室温下使用200kV传输电子显微镜对纯进行现场辐射.
- 对四种晶体学方向的辐射缺陷进行比较分析.
- 专注于<111>和<110>脱位环的尺寸,密度和间隙含量.
主要成果:
- <111> 脱位环始终表现出更高的间位原子密度 (IAD) 超过 <110> 环在所有辐射方向.
- 在 [110] 照射下,<111> 循环显示的IAD比<110> 循环高约55倍,归因于<110> 循环迁移.
- 总的IAD订单: [110] > [111] > [310] > [100] .
结论:
- 晶体学定位显著影响中辐射缺陷的形成和间隙原子密度.
- <111> 环比<110> 环更有效地吸收间歇物质,特别是在 [110] 辐射下.
- 推断的门位移能 (Ed) 是如下: [110] < [111] < [310] < [100].
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