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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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积极像素型CMOS图像传感器设计技术和架构的进步,用于广泛的动态范围.

Sangwoong Sim1, Jaehoon Jun1

  • 1Department of Electrical and Computer Engineering and Program in Semiconductor Convergence, Inha University, Incheon 22212, Republic of Korea.

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概括

本研究探讨了用于广动态范围 (WDR) 成像的高级CMOS图像传感器 (CIS) 设计. 它详细介绍了诸如双转换增益和新型架构等技术,以增强用于各种工业应用的光强度捕获.

关键词:
这是一个CMOS图像传感器 (CIS).相关的多重采样 (CMS)双转换增益 (DCG) 是指双转换增益.双光电二极管 (PD) 的使用动态范围 (DR) 的动态范围侧面溢出集成电容器 (LOFIC) 的使用线性反应是一种线性反应.线性逻辑 (Lin-Log) 响应反应一个对数回应的对数回应.多重暴露多次暴露多次暴露

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科学领域:

  • 电气工程 电气工程
  • 计算机视觉 计算机视觉
  • 材料科学 材料科学 材料科学

背景情况:

  • 在机器视觉,医疗成像,汽车系统和物联网设备中,CMOS图像传感器 (CIS) 是至关重要的.
  • 动态范围 (DR) 是CIS的一个关键指标,它决定了它们在广泛的光强度范围内捕捉图像的能力.
  • 对宽动态范围 (WDR) 功能的不断增长的需求推动了CIS技术的创新,以在各种照明条件下提高性能.

研究的目的:

  • 介绍积极像素类型的CIS设计技术和架构,以实现宽动态范围 (WDR).
  • 为改善图像传感器捕获光强度的方法提供全面的概述.
  • 探索未来的研究方向,包括神经形态阵列架构.

主要方法:

  • 审查基本的活跃像素传感器概念,读取机制和DR原则.
  • 传统技术的分析:多次暴露和双重转换增益 (DCG).
  • 研究先进的架构:侧面溢出集成电容器 (LOFIC),双光二极管 (PD) 和线性-对数 (Lin-Log) 响应.

主要成果:

  • 通过优化曝光和整合的权衡来增强DR的技术演示.
  • 实现非线性传感器响应 (对数和Lin-Log) 以提高性能.
  • 探索在低光环境中提高灵敏度的方法.

结论:

  • 所介绍的技术和架构显著提升了CIS中的WDR功能.
  • 这项研究为未来的图像传感器技术创新提供了基础.
  • 这些发现适用于尖端的进步和研究,包括神经形态计算.