一项关于Dy-doped LaBiO3陶用于热敏电阻应用的结构,微观结构和电气性能的综合研究
Chandan Kumar Lenka1, S K Parida1
1Department of Physics, ITER, Siksha 'O' Anusandhan Deemed to be University Bhubaneswar-751030 India santoshparida@soa.ac.in.
RSC advances
|January 28, 2026
概括
这项研究合成了用dysprosium替代的兰坦 bismuth 氧化物 (LBDO). 该材料表现出一个正方体结构和半导体特性,使其适合用于储能和温度传感应用.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 氧化物材料 氧化物材料
背景情况:
- 兰二甲氧化物正在被用于电子应用.
- 通过稀土替代调整性能是关键策略.
- 了解结构属性关系对于材料设计至关重要.
研究的目的:
- 合成和描述二替代的兰坦 bismuth 氧化物 (LaBi0.95Dy0.05O3,LBDO).
- 研究LBDO的结构,微结构,介电和导电性质.
- 评估LBDO在储能和温度传感方面的潜力.
主要方法:
- 合成的固态反应.
- 用瑞特维尔德精细化进行结构分析的X射线衍射 (XRD).
- 扫描电子显微镜 (SEM) 用于微观结构的研究.
- 能量分散式X射线光谱 (EDX) 用于元素分析.
- 介电光谱学,阻抗分析和电特性模量光谱学.
主要成果:
- LBDO结晶成一个具有特定结晶体大小,格子应变和脱位密度的正方形结构.
- SEM揭示了均的粒度分布,可能会提高导电性.
- 介电分析显示了麦克斯韦尔-瓦格纳型分散.
- 阻抗和导电性研究表明负温度电阻系数 (NTCR) 行为,热激活的跳跃机制和非德拜放松.
- 尼奎斯特和科尔-科尔的图表证实了半导体的性质.
结论:
- 合成的LBDO是一种半导体,具有储能器件的有前途潜力.
- 该材料具有NTC热敏电阻特性,适用于温度传感器应用.
- 这项研究提供了对Dy替代的甲氧化物中结构性质相关性的见解.
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