在Si(111) 上培养的AlGaN/GaN异构结构中导电线程位移的局部表征和电流电压建模,以及在工程聚烯基基底层上培养的聚烯基基底层
Albert Minj1, Andrea Pondini2, Han Han3
1Materials and Components Analysis, IMEC, Kapeldreef 75, Leuven, Vlaams-Brabant, 3001, BELGIUM.
Nanotechnology
|January 29, 2026
概括
化 (GaN) 晶体管的缺陷会影响性能. 这项研究揭示了特定的位移作为垂直导电路径,使AlGaN/GaN异构结构中的新运输机制成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 纳米技术 纳米技术
背景情况:
- 由于化的特性,AlGaN/GaN高电子流动性晶体管对于高功率和高频应用至关重要.
- 在Si基板上的GaN表中线程位移会降低设备的性能和可靠性.
- 对于Si上的>1kV应用,厚厚的GaN增长会造成应变,需要工程基板.
研究的目的:
- 为了研究AlGaN/GaN异构结构中异位的当前运输特性.
- 在工程AlN基板 (QST®) 上种植的GaN与传统Si (111) 基板进行比较.
- 识别和分析与特定有害位移相关的传导机制.
主要方法:
- 使用导电原子力显微镜,阴极发光显微镜和电子道对比成像进行相对纳米尺度表征.
- 对脱位敏感的蚀刻被重新审视,以分析脱位行为.
- 在单个位移上进行了局部电流电压的表征和建模.
主要成果:
- 在特定类型的位移中观察到垂直导电路径,仅占位移总密度的1%.
- 对这些导电失调的现有运输机制进行了分析.
- 普尔-弗伦克尔发射和可变范围跳跃被确定为在反向偏差下的主要导电机制.
结论:
- 在AlGaN/GaN异构结构中的某些位移有助于垂直电流传输.
- 了解这些特定的移位传输机制是提高设备可靠性和性能的关键.
- 工程基板有潜力减轻高压GaN设备中有害的脱位效应.
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