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Updated: Jan 31, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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几乎双通道氧化物晶体管具有增强的稳定性和性能

Sheng-Xin Lin1,2, Yu-Yu Hong1,2, Jun-He Shen1,2

  • 1Micro&Nano Semiconductor Research Center of Jimei University, School of Ocean Information Engineering, Jimei University, Xiamen, China.

Small (Weinheim an der Bergstrasse, Germany)
|January 30, 2026
PubMed
概括

本研究介绍了金属氧化物薄膜晶体管 (MO TFT) 的准双通道策略. 这种方法通过精确控制氧含量,提高工艺耐受性来提高设备的稳定性和移动性.

关键词:
含有TA-的锡氧化物.改善了稳定性的改善.几乎是双通道的.薄膜晶体管是一种薄膜晶体管.

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