在TaOx/HfO2基ReRAM中解离电场和温度驱动的原子形成机制,使用反应分子动力学模拟来进行反应分子动力学模拟.
Simanta Lahkar1, Valeria Bragaglia1,2, Behnaz Bagheri3
1NanoComputing Research Lab, Integrated Circuits Group, Electrical Engineering Department, Eindhoven University of Technology, Eindhoven 5612AZ, The Netherlands.
分子动力学模拟揭示了TaOx/HfO2电阻切换记忆中的原子机制. 离子迁移和在电极附近的氧气空隙聚合启动了电丝形成,需要一个值电压.
科学领域:
- 材料科学 材料科学 材料科学
- 固态电子 固态电子
- 计算物理 计算物理
背景情况:
- 使用双层TaOx/HfO2堆的电阻随机访问记忆 (RRAM) 显示多层切换.
- 控制这些设备中的成形过程的原子层机制尚不清楚.
研究的目的:
- 为了阐明TaOx/HfO2 RRAM设备中成型过程的原子化机制.
- 在原子尺度上分析离子迁移和导电丝核.
主要方法:
- 使用了分子动力学 (MD) 模拟.
- 使用了一个扩展的电荷平衡方案,将电荷转移离子潜力和电化学动力学结合起来.
- 应用电压对离子位移的局部影响被建模.
主要成果:
- 离子显示出最大的位移,其次是 hafnium 离子;氧离子表现出最小的反应.
- 在正电极附近形成一个富含,富含氧气的区域,在负电极附近形成氧气空位集群.
- 对于空位集群,需要最低值电压;导线生长是局部的,并通过热激活.
结论:
- 这项研究阐明了TaOx/HfO2 RRAM中的原子层形成机制.
- 离子分离和氧空隙聚类是导电丝核形成的关键.
- 局部化,热激活的缺陷生成驱动了线丝的生长.
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