TaOx/HfO2ReRAM,使.

Simanta Lahkar1, Valeria Bragaglia1,2, Behnaz Bagheri3

  • 1NanoComputing Research Lab, Integrated Circuits Group, Electrical Engineering Department, Eindhoven University of Technology, Eindhoven 5612AZ, The Netherlands.

PubMed
概括

分子动力学模拟揭示了TaOx/HfO2电阻切换记忆中的原子机制. 离子迁移和在电极附近的氧气空隙聚合启动了电丝形成,需要一个值电压.

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