从旋转量子位中的相关性推断电荷噪声源位置
J S Rojas-Arias1, A Noiri2, J Yoneda3
1RIKEN, Center for Quantum Computing (RQC), Wako-shi, Saitama 351-0198, Japan.
Physical review letters
|January 30, 2026
概括
我们研究了-旋量子比特中的低频噪声. 我们发现电荷噪声占主导地位,来自单独的两级波动器,并使用交叉相关性来定位它们.
科学领域:
- 量子计算是一种量子计算.
- 凝聚物质物理学 凝聚物质物理学
- 半导体器件是指半导体器件.
背景情况:
- -中的自旋量子比特对量子计算具有前景.
- 低频噪声是量子比特性能的主要障碍.
- 了解噪音源对于设备改进至关重要.
研究的目的:
- 研究Si/Si-Ge自旋量子位中的低频噪声.
- 确定占主导地位的噪音源及其特征.
- 开发方法来定位单个噪声源.
主要方法:
- 在同位素净化Si/Si-Ge.Ge中制造自旋量子比特.
- 测量量子比特之间的能量波动和交叉相关性.
- 分析噪声光谱以确定两级波动器 (TLF).
主要成果:
- 在量子比特能量波动中观察到显著的交叉相关性,表明充电噪声占主导地位.
- 发现噪声光谱并非权力法分布,而是显示单个TLF的贡献.
- 证明噪声交叉相关性可以在空间上定位单个TLF.
结论:
- 来自单个TLF的充电噪声是Si/Si-Ge自旋量子位中的主要噪声来源.
- 噪声交叉相关性测量为特征和定位噪声源提供了强大的工具.
- 这项工作为减轻噪音和改善量子比特连贯性提供了一条途径.
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