在SOI上使用单一的III-V膜光子晶体激光器,采用选择性横向异质化
Cong Zeng1, Zhaojie Ren1, Zili Lei1
1State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China.
Light, science & applications
|January 30, 2026
概括
我们开发了新的III-V膜光子晶体 (PhC) 激光器在在绝缘体上使用选择性横向异质. 这种方法提高了芯片上光学互连的机械稳定性和效率.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 半导体激光器半导体激光器
背景情况:
- III-V光子晶体 (PhC) 激光器为芯片内光学互连提供紧的低功耗光源.
- 传统的PhC激光器由于空气桥结构和通过增益介质蚀刻而面临机械稳定性和效率方面的挑战.
- 现有的制造方法,如粘合和再生长,增加了复杂性和成本.
研究的目的:
- 通过在在绝缘体 (SOI) 上开发单立体集成的III-V膜PhC激光器来解决传统PhC激光器的局限性.
- 通过一种新的制造方法来提高机械稳定性和效率.
- 为下一代光学互联网提供成本效益高的PhC激光器大规模生产.
主要方法:
- 利用选择性横向异质和金属有机化学蒸汽沉积 (MOCVD) 在SOI上实现无位的InP膜生长.
- 在Si-光子造厂的图案SOI晶圆.
- 在InP膜内放置InGaAs/InP量子井 (QW),以避免通过增益介质蚀刻.
主要成果:
- 在SOI上实现了无位的InP膜,通过避免悬浮结构来增强机械稳定性.
- 通过避免增强介质中的空气孔,消除了表面重组和提高了效率.
- 制造的近红外 (910 nm) 和电信 (1430 nm) PhC激光器在室温下具有低值 (分别为17.5 μJ/cm2和5.7 μJ/cm2).
结论:
- 建立了一种新的方法,用于制造PhC激光器,使用选择性的横向 heteroepitaxy.
- 在SOI上为单立体集成的PhC激光器提供了一种优雅的解决方案.
- 在下一代光学互连中为超紧和节能光源铺平了道路.
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