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Updated: Feb 1, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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基于范德瓦尔斯铁电CuInP2S6的多斜坡内存概率计算.

Changyoung Kim1,2, Namju Kim3, Seongkweon Kang1,2

  • 1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Republic of Korea.

Advanced materials (Deerfield Beach, Fla.)
|January 31, 2026
PubMed
概括

研究人员通过使用CuInP2S6.6.将随机位生成和内存集成到单个设备中,开发了一种新的概率位 (p-bit). 这种内存计算方法显著提高了复杂计算的效率和性能.

关键词:
在CuInP2S6S6中使用.在内存计算中的计算.一点概率的比特.概率计算是一种概率计算.范德瓦尔斯铁电厂铁电厂

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