异常高阶拓相在变磁体/拓绝缘体异构结构中的出现 通过Floquet工程
Donghao Wang1, Arnob Kumar Ghosh2, Yongchun Tao1
1Department of Physics, Nanjing Normal University, Nanjing, Jiangsu, China.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 31, 2026
概括
变磁与Floquet工程相结合,产生了异常的高阶拓绝缘体. 这个平台允许对拓角模式进行可编程控制,为可重新配置的拓电子和量子计算铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 拓学物质物理 材料物理
- 量子工程是量子工程的组成部分.
背景情况:
- 变磁体表现出对线补偿的磁顺序和旋转动量锁定.
- 拓绝缘器 (TI) 具有独特的电子特性,受到时间逆向对称的保护.
- 浮板工程允许使用时间周期性扰动对材料属性的动态控制.
研究的目的:
- 在Floquet工程下调查变磁和拓绝缘体之间的相互作用.
- 探索异常高阶拓绝缘体 (AHOTI) 阶段的出现.
- 为了证明对拓角模式的可编程控制.
主要方法:
- 制造变磁体/拓绝缘体异构结构.
- 应用Floquet工程来打破时间逆向对称.
- 使用嵌套的动态威尔逊循环形式主义进行表征.
- 对异常的 $\pi$-角模式 (CMs) 的分析.
主要成果:
- 演示了使用纯/混合 $\pi$-CMs 的 AHOTI 阶段.
- 确定了三种不同的拓相过渡 (平到AHOTI-I,TI到AHOTI-II,AHOTI-I <-> AHOTI-II).
- 通过 Néel 矢量重定位,展示了对 CM 定位的可编程变磁控制.
结论:
- 在Floquet工程下的Altermagnet/TI异构结构为非平衡拓相控制提供了一个多功能平台.
- 证明了拓状态的可编程本地化对未来的电子和量子计算设备有重大影响.
- 这项工作为设计可重新配置的拓材料和设备开辟了新的途径.
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