校正:大面积薄膜合成光活性Cu3PS4硫酸半导体,pH稳定范围为0-14
Lena A Mittmann1, Javier Sanz Rodrigo1, Eugène Bertin1
1National Centre for Nano Fabrication and Characterization (DTU Nanolab), Technical University of Denmark 2800 Kongens Lyngby Denmark mittma@dtu.dk ancro@dtu.dk.
Chemical science
|February 2, 2026
概括
这项研究纠正了先前发表的一篇文章DOI. 校正确保了科学界准确的引用和引用.
科学领域:
- 化学 化学 化学
- 材料科学 材料科学 材料科学
背景情况:
- 上一篇文章DOI被错误引用了.
- 准确的引用对于科学完整性至关重要.
研究的目的:
- 为所引用的物品提供正确的DOI.
- 为了确保正确的归因并避免混.
主要方法:
- 确定正确的物品DOI.
- 更新该手稿的参考列表.
主要成果:
- 该产品的正确DOI是10.1039/D5SC05882A. 正确的DOI是10.1039/D5SC05882A. 这是一个非常好的标识.
- 这种纠正确保了科学记录的完整性.
结论:
- 修正后的DOI有助于准确地检索原始研究.
- 这确保了科学文献中适当的引用实践.
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