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Updated: Feb 4, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

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在AgOx/SnSe2的数字切换和模拟突触之间的过渡通过厚度工程的Memristor

Tao Zhou1, Xiaoyu Wang1, Xueting Liu1

  • 1Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|February 2, 2026
PubMed
概括

这项研究介绍了一种具有可调节数字和模拟开关的新型AgOx/SnSe2记忆器. AgOx层的厚度工程使神经形态计算和高级内存应用程序的多功能功能成为可能.

关键词:
在AgOx中使用AgOx.模拟突触是一种模拟突触.数字交换机的数字交换机记忆器的使用者

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