在化学放大电阻的电子束刻法中克服分辨率限制的综合策略
Xinpei Wu1, Nikhil Tiwale1, Aaron Stein1
1Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States.
ACS applied materials & interfaces
|February 3, 2026
概括
使用近距离效应校正 (PEC) 和多通道曝光解决了电子束光刻 (EBL) 的挑战. 这改善了关键维度控制,并减少了用于高分辨率纳米尺度图案的线路粗度.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 半导体制造业 半导体制造业
背景情况:
- 化学放大电阻 (CARs) 的电子束光刻 (EBL) 由于电子散射和酸扩散而面临分辨率和可重现性限制.
- SU-8 resist被用作一个模型系统来研究这些EBL挑战的解决方案.
研究的目的:
- 系统地研究补充策略,以改善EBL解决方案和可重复性.
- 解决CAR中随机散射,酸扩散和化学放大效应的问题.
主要方法:
- 利用蒙特卡洛模拟和校准的近距离效应校正 (PEC) 建模,包括中距离校正因子.
- 实施多通道曝光策略 (例如,四通道写作与偏移).
- 研究的基灭器内置 (尿素) 和暴露后烧烤 (PEB) 抑制.
主要成果:
- 扩展PEC与中距离校正显著改善了对各种模式密度的临界维度 (CD) 控制.
- 多通道曝光将线宽粗度降低了50%以上,提高了特征均性.
- 抑制PEB有效地减少了酸扩散,产生可重现的30nm半音调模式和改进的Z因子.
结论:
- 将PEC与中距离校正,多通道策略和无PEB处理相结合,为CAR中先进的纳米尺度模式提供了一个全面的框架.
- 结果为优化高分辨率EBL和潜在的EUV石版设计和工艺策略提供了指导原则.
- 虽然基础火器减少了扩散,但它们引入了灵敏度处罚,突出了限制策略中的权衡.
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