使用 GaN-HEMT 和 VCB 的 HVDC 系统的故障中断方案
Ali Raza1, Muhammad Zeeshan Babar2, Muhammad Umair Shahid1
1Department of Electrical Engineering, Khwaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan.
概括
本研究介绍了一种使用GaN-HEMT开关的混合直流断路器,用于更快地在HVDC系统中断故障. 与基于SiC-MESFET的开关相比,新设计显著提高了故障清理时间.
科学领域:
- 电气工程 电气工程
- 电力系统工程 电力系统工程
- 材料科学 材料科学 材料科学
背景情况:
- 高压直流 (HVDC) 传输需要可靠的断路器来断断故障.
- 像SiC-MESFET和GaN-HEMT这样的宽带间隙半导体设备对于先进的高频直流断路器至关重要.
- 混合直流断路器 (HDCCB) 结合了机械和电子开关,以实现高效的故障管理.
研究的目的:
- 建议和评估使用新型混合直流断路器对HVDC系统的先进故障中断方案.
- 为了研究化高电子移动性晶体管 (GaN-HEMT) 开关与碳酸金属半导体场效应晶体管 (SiC-MESFET) 快速故障电流中断开关的性能.
- 为了证明拟议的HDCCB设计在减少故障清理时间方面的有效性.
主要方法:
- 开发混合直流断路器 (HDCCB),将真空断路器 (VCB) 与快速切换的GaN-HEMT电子开关集成在一起.
- 在Simulink中实现一个系统模型,用于对不同保护拓的比较分析.
- 使用人工零电流交叉进行电流切换,以促进直流故障中断.
主要成果:
- 采用GaN-HEMT开关的拟议HDCCB实现了2.2 ms (500 kV, 9 kA) 和2 ms (100 kV, 10 kA) 的故障清除时间.
- 这意味着与现有的基于SiC-MESFET的机制相比,故障清理时间的显著改善为52.38%和50%.
- 通过模拟结果验证,GaN-HEMT显示出比SiC-MESFET更高的可靠性和更快的切换性能.
结论:
- 使用GaN-HEMT开关的先进的HDCCB设计为HVDC系统的快速故障中断提供了非常有效的解决方案.
- 在HVDC中,GaN-HEMT技术为高功率电子开关应用提供了相对于SiC-MESFET的显著性能优势.
- 拟议的方案提高了HVDC传输保护的整体可靠性和效率.
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