在300毫米的试点线路中集成和电气评估WS2和MoS2 fets
T Schram1, Q Smets1, A Opdebeeck1
1IMEC, Kapeldreef 75, Leuven, 3001 Belgium.
概括
研究人员开发了一种300mm的制造工艺,用于2D场效应晶体管 (FET),使用过渡金属二二化物 (TMDC). 这项工作解决了先进半导体制造的关键整合挑战.
科学领域:
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) 材料为扩展CMOS缩放路线图提供了潜力.
- 升级基于实验室的2D材料演示器到300mm晶圆兼容性,带来了重大整合挑战.
研究的目的:
- 开发和验证2D场效应晶体管 (FET) 的300mm制造流程.
- 在半导体试点线环境中解决二维材料的关键集成挑战.
- 提供对2D FET性能和可制造性的全面评估.
主要方法:
- 在300mm试点线上制造具有单层2D过渡金属二甲基化物 (TMDC) 通道的FET.
- 开发和优化TMDC的增长,转移,清洁,门沉积和接触过程.
- 使用专用测试结构进行严格的电气表征,以评估设备性能,可扩展性,产量,可变性,可靠性和稳定性.
主要成果:
- 为平面2D FETs成功实现了300mm fab兼容的集成流.
- 识别和讨论与二维材料的范德瓦尔斯结合相关的关键整合挑战.
- 对FET性能指标进行全面的电气评估,证明了可制造的2D设备的进展.
结论:
- 开发的300mm集成流量代表了在先进的半导体制造中实现2D材料的重要一步.
- 解决工厂特定的污染控制和材料处理对于成功的2D FET集成至关重要.
- 这项工作为未来的300mm 2D FET开发提供了基础描述和评估.
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