在2D AgCrS2中以离子驱动的价值变化机制为超低功率和可靠的memristors

Yueqi Su1, Minghao Wang1, Xiaolin Tai1

  • 1Key Laboratory of Precision and Intelligent Chemistry, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Mechanical Behavior and Design of Materials, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), and School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, China.

概括

这项研究引入了一种新的2D AgCrS2 记忆器,用于低功耗,稳定的人工智能电路,使用阴离子驱动的价值变化机制 (CVCM). 这一突破避免了光纤的生长,从而实现了节能且可靠的神经形态计算.

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