高温Ni-扩散困扰固体氧化物细胞的离子导电性
Jiakun Sun1,2, Hengbo Yin1,2, Yan Li1,2,3
1State Key Laboratory of Materials Low-Carbon Recycling, College of Materials Science & Engineering, Beijing University of Technology, Beijing, China.
Small (Weinheim an der Bergstrasse, Germany)
|February 5, 2026
概括
在固体氧化物细胞制造过程中分离显著阻碍了离子导电性,因为它阻断了YSZ粒边界的氧化物离子扩散. 缓解这种分离会使离子导电率增加一倍,从而提高细胞性能.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 陶制品 在陶方面.
背景情况:
- 在工作温度 (∼750°C) 的 (Ni) 扩散会降解固体氧化物细胞 (SOC).
- 高温制造工艺 (∼1400°C) 可以加剧与Ni相关的问题.
- 了解制造过程中的Ni行为对于SOC的寿命至关重要.
研究的目的:
- 调查 SOC 制造过程中 Ni 扩散对 yttria 稳定 (YSZ) 颗粒边界 (GB) 的影响.
- 量化离子分离对氧化物离子导电性的影响.
- 探索减轻Ni分离和提高SOC性能的方法.
主要方法:
- 电化学测试以评估离子导电性.
- 先进的电子显微镜来分析YSZ GBs的Ni分离.
- 超快的高温烧结用于减轻.
主要成果:
- 在制造过程中在YSZ GBs中离子分离率高达≤7at.%,严重降低了氧化物离子导电性.
- 增加的Ni缩使空间电荷层变厚,并提高空间电荷潜力,阻碍离子扩散.
- 通过超快速烧结进行缓解,在700°C时离子导电率翻了一番.
结论:
- 在YSZ GBs的Ni分离显著降低了SOCs中的离子导电性.
- 缓解Ni分离提供了一种降低欧姆电阻和提高SOC性能的新策略.
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