阳性和阴性双型基于的混合干光电阻,用于纳米刻光学
Xingkun Wang1, Yutao Xu1, Ou Zhang1
1Tianjin Key Lab for Rare Earth Materials and Applications, Center for Rare Earth and Inorganic Functional Materials, Smart Sensor Interdisciplinary Science Center, School of Materials Science and Engineering, Nankai University, Tianjin 300350, China.
ACS applied materials & interfaces
|February 6, 2026
概括
研究人员开发了一种基于的新型混合光电阻,用于先进的光刻. 这种高分辨率的干光电阻克服了传统湿法的局限性,为下一代半导体制造提供了精确的图案传输.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 半导体制造业 半导体制造业
背景情况:
- 传统的光电阻处理在精确的厚度控制和图案崩方面面临挑战,特别是在高NA EUV光刻中的20nm以下特征.
- 基于解决方案的方法在湿开发过程中遇到诸如毛细血管作用等局限性,阻碍了先进节点所需的超薄膜的制造.
研究的目的:
- 开发一种高分辨率的干光电阻,使用一种基于的混合薄膜.
- 通过分子层沉积 (MLD) 和不同的开发技术,研究双种类型的光电阻能力 (正和负).
主要方法:
- 制造一种基于哈夫的混合薄膜,使用四甲 (TDMAHf) 和2-丁-1,4-二醇 (BED) 通过MLD.
- 使用感应合等离子体 (ICP) 干蚀刻的正型光电阻的开发.
- 使用15%四甲基氧化 (TMAH) 湿开发的负型光电阻的开发.
- 使用 25 keV 和 50 keV 的电子束暴露的分辨率测试.
主要成果:
- 在25keV电子束暴露下达到2400μC/cm2的灵敏度.
- 在50 keV的干燥开发中显示了20 nm的分辨率.
- 在50 keV的湿开发中达到7nm的分辨率.
结论:
- 开发的基于 hafnium 的混合光电阻表现出先进的 lithography 应用的巨大潜力.
- 这项研究为开发卓越的干光电阻技术提供了基础,解决了半导体微型化的关键挑战.
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