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Updated: Feb 7, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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单晶 γ-Bi2O3的逐步引导增长,具有单向导向,作为2D晶体管的高-κ介电体

Banglin Hu1,2, Lei Tang1, Runzhang Xu3

  • 1Songshan Lake Materials Laboratory, Dongguan 523808, China.

Nano letters
|February 6, 2026
PubMed
概括

高性能二维 (2D) 介电材料对于先进的集成电路至关重要. 本研究介绍了一种合成单晶γ-Bi2O3的新方法,克服了二维介电发展中的关键挑战.

关键词:
两维材料是二维材料.在C/M的蓝宝石.在FET中,FET是FET.化学蒸气沉积 化学蒸气沉积高κ介电的介电器一步一步地引导的边缘引导.

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