作为高性能TiO2基于DRAM电容器的接口控制层,合MoO2膜的原子层沉积
Jae Hyeon Lee1, Bo Keun Park2, Taek-Mo Chung2
1Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea.
ACS applied materials & interfaces
|February 6, 2026
概括
通过原子层沉积 (ALD) 生长的新型Sn嵌入的MoOx (TMO) 薄膜,增强动态随机访问内存 (DRAM) 电容器. 这些TMO膜作为接口控制层 (ICL),改善容量和减少下一代内存设备的泄漏电流.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术纳米技术
背景情况:
- 将动态随机存储器 (DRAM) 扩展到10nm以下的节点,在维持细胞容量和最小化泄漏电流方面存在挑战.
- 新型电极材料和工程接口对于高密度内存应用至关重要.
- 接口控制层 (ICL) 对于优化金属绝缘体金属电容器的介电性质至关重要.
研究的目的:
- 为了研究 Sn 嵌入的 MoOx (TMO) 薄膜的热原子层沉积 (ALD),用于作为 DRAM 电容器中的 ICL.
- 分析TMO膜在TiO2和TiN电极之间的生长特征和接口效应.
- 评估TMO ICL对等氧化物厚度 (EOT) 缩放和泄漏电流密度的影响.
主要方法:
- 采用特定的Mo和Sn前体的MoOx (TMO) 膜的热原子层沉积 (ALD).
- 对TMO膜生长的系统研究,包括MoOx和SnOx子循环之间的相互作用.
- 具有TMO ICL的金属绝缘体金属电容器的制造和表征,TMO厚度从20nm到1nm不等.
主要成果:
- 控制的Sn结合稳定了单临床MoO2阶段,增强了热和化学稳定性,形态顺.
- ALD TMO ICLs在现场促进了 rutile TiO2结晶 (k ≈ 156) 并抑制了低k TiOxNy形成,从而实现了 EOT 的缩放.
- 与TiN (4.5 eV) 相比,TMO ICL由于其更高的工作功能 (4.7-4.8 eV) 显著降低了泄漏电流密度.
- 即使在1-2纳米厚度,TMO ICL也实现了0.58纳米的EOT和2.4×10-7A/cm2的泄漏电流密度.
结论:
- ALD培养的TMO薄膜有效地作为DRAM电容器中的接口控制层发挥作用.
- TMO ICL显著提高容量,减少泄漏电流,解决DRAM扩展的关键挑战.
- 这些发现证明了ALD TMO片在下一代高密度内存应用中的潜力.
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