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Updated: Feb 8, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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在拓性半金属中,门调节式旋转切换效应和双线磁电电阻

An-Qi Wang1, Tong-Yang Zhao1, Chuan Li2

  • 1Peking University, State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, ; Beijing 100871, China.

Physical review letters
|February 6, 2026
PubMed
概括

研究人员通过向Cd3As2.2添加金原子来设计了用于自旋电子的拓材料. 这种表面修改使旋转纹理的门控制成为可能,增强了旋转信号,并实现了72,000%的旋转场效应晶体管 (FET) 可调节的开关比率.

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