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Updated: Feb 12, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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缺陷的选择性激发促进了半导体接口的超快热电子传输

Tianjun Wang1,2, Kaiping Wang3, Huizhi Xie1

  • 1State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China.

Journal of the American Chemical Society
|February 10, 2026
PubMed
概括

研究人员直接检测到超快的热电子转移,从二氧化 (TiO2) 缺陷到酸盐,只需15 femtoseconds. 这种缺陷介导的过程提高了太阳能转换效率.

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