相关实验视频

Updated: Feb 12, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K

改进了AlGaN/GaN金属绝缘体半导体高电子流动性晶体管的接口质量和稳定性,使用N2-化原子层沉积SiNx门介电

Kexin Deng1,2, Sen Huang1,2,3, Xinhua Wang1,2,3

  • 1High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

ACS applied materials & interfaces
|February 10, 2026
PubMed
概括

在高电子流动性晶体管 (MIS-HEMT) 中,优化原子层沉积的SiNx介电材料的回火,消除缺陷. 这提高了下一代动力电子设备的设备稳定性和性能.

关键词:
这就是ALD-SiNx.在AlGaN/GaN MIS-HEMTs中使用.介电陷是一种介电陷.接口状态表示接口状态.沉积后的回火 沉积后的回火

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Published on: May 23, 2018

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Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO08:14

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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