为二维半导体接触提供基于等离子知识的多态工程
Ji Won Heo1, Gwang-Seok Chae2, Gyeong Deok Seo1
1Department of Intelligent Semiconductor Engineering, University of Seoul, Seoul 02504, Republic of Korea.
我们开发了一种基于等离子体的方法,用于在二维过渡金属二二基因化物 (TMD) 中创建超低电阻的欧姆接触. 这种技术使得用于下一代电子产品的先进半导体的可扩展制造成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 半导体物理 半导体物理
背景情况:
- 二维 (2D) 过渡金属二甲基化物 (TMD) 对扩展CMOS技术具有前景.
- 一个主要的障碍是缺乏可扩展的,与造厂兼容的超低电阻欧米接触方法.
研究的目的:
- 展示一种CMOS兼容的方法,用于在TMD中创建超低电阻欧姆接触.
- 为了使TMD能够集成到下一代智能CMOS技术中.
主要方法:
- 利用等离子离子辐射诱导相变,在MoTe2和WS2中的半导体2H相内创建金属1T'相.
- 采用定量等离子参数计量学来识别离子-固体相互作用模式,并确定最佳的离子能量流量.
- 通过精确调节等离子体动能流量,制造出多态边缘接触.
主要成果:
- 实现了显著降低的接触电阻,降至122 Ω·μm.
- 在与边缘接触的MoTe2设备中,证明了增强的启动电流 (高达68.15μA/μm),打开/关闭比超过107,以及记录移动性 (1.61 × 104 cm2/V·s).
- 展示了出色的电流和和设备稳定性.
结论:
- 建立了一个可通用的框架,用于在2D材料中实现等离子体相位工程.
- 为将多态TMD接口集成到下一代智能CMOS设备中提供了一个可制造的途径.
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