通过转移打印,共集成半孔GaN分布式布拉格反射器和发光二极管
Optics letters
|February 13, 2026
概括
化 (GaN) 分布布拉格反射器 (DBR) 通过转印集成到和玻璃上. 这使得新型光学共振腔和增强的发光二极管的制造成为可能.
科学领域:
- 光电学是指光电子产品.
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 基于化 (GaN) 的光子设备具有独特的光学特性.
- 分布布拉格反射器 (DBR) 对于光腔形成至关重要.
- 将GaN DBR与其他基板集成仍然是一个挑战.
研究的目的:
- 为了证明基于GaN的DBR的转印.
- 制造光学共振腔和活性光电子设备.
- 为了描述制造的设备的光学性能.
主要方法:
- 转印介质 GaN DBR 膜的转印.
- 在上制造多模式光学共振腔.
- 将GaN DBR与基于GaN的发光二极管集成.
- 包括反射率和辐射谱在内的光学表征.
主要成果:
- 成功转移了具有90%反射率和100微米尺寸的GaN DBRs.
- 制造的多模式光学共振腔,中心位于Si的450nm.
- 从14纳米峰值转移的活跃设备中证明了Fabry-Perot介导的辐射.
- 在小信号调制中实现了136 MHz (-6 dB) 的光学带宽.
结论:
- 转印是一种可行的方法,可以将GaN DBR与各种基板集成在一起.
- 半孔GaN DBR作为复杂光子装置的有效构建块.
- 制造出来的设备在光电子应用中显示出有前途的性能.
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