模拟调节的非挥发性无调节器的memristors用于神经形态控制
Seung Jun Ki1, Shiwoo Lee1, Xiaoqiu An1
1Mechanical Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, United States.
ACS nano
|February 16, 2026
概括
新 bismuth selenide (Bi2Se3) 记忆器为神经形态计算提供稳定的模拟调和非挥发性保留. 这些设备可以在硬件储存器计算网络中实现超低功耗.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 计算机工程 计算机工程
背景情况:
- 模拟调节的memristors缺乏用于神经形态应用的保留.
- 传统的非挥发性记忆器会出现突然切换,需要电流调节器.
研究的目的:
- 为可扩展的神经形态计算开发垂直排列的Bi2Se3记忆器.
- 克服当前用于突触应用的memristor技术的局限性.
主要方法:
- 使用黄金辅助物理蒸汽沉积 (PVD) 制造Bi2Se3记忆器.
- 模拟导电性调节,保留和切换电压的表征.
- 在一个全硬件储计算网络中的实现.
主要成果:
- Bi2Se3的memristors显示10-40%的模拟调与稳定的保留 (<1%的损失超过10^4秒).
- 通过电迁移实现的低开关电压 (-0.98 V SET, +0.7 V RESET).
- 储计算网络显示了超低功耗 (∼7μW) 的性能具有竞争力 (NRMSE = 0.094).
结论:
- Bi2Se3记忆元为非挥发性突触节提供了强大的解决方案.
- 这些设备可以实现节能,基于硬件的神经形态计算.
- 开发的memristors适用于可扩展的生产和先进的计算架构.
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