使--CdSe@CdS

Krishan Kumar1,2, Jens Uhlig3,4,5, Raktim Baruah1,2,6

  • 1Department Functional Interfaces, Leibniz Institute of Photonic Technology Jena, Albert-Einstein-Straße 9, 07745 Jena, Germany. krishan.kumar@uni-oldenburg.de.

Nanoscale
|February 16, 2026
PubMed
概括

在半导体纳米晶体中确定多刺激子吸收截面是具有挑战性的. 这项研究使用了回探针暂时吸收光谱法来测量CdSe@CdS纳米棒中激子和多激子的这些截面.