陷控制的导电和金属绝缘体过渡在超导酸记忆器中
Thomas Günkel1,2, Enrique Miranda2, Lluís Balcells1
1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain.
概括
高温超导酸盐记忆体表现出用于神经形态计算的强大的切换. 一个双陷模型解释了这种机制,使冷平台与超导架构兼容.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 神经科学是一个神经科学.
背景情况:
- 记忆器件对于神经形态计算至关重要.
- 了解高温超导铜中的电阻切换机制是必不可少的.
- ,,铜氧化物 (YBCO) 是这些设备的一个有前途的材料.
研究的目的:
- 研究YBCO记忆器中电阻切换的微观机制.
- 探索 memristor 行为在 80-300 K 的温度依赖性.
- 阐明接口层和陷动态在设备操作中的作用.
主要方法:
- YBCO记忆器的制造和表征.
- 取决于温度的电流-电压 (I-V) 测量.
- 导电机制和陷状态动态的分析.
主要成果:
- 在研究温度范围内的YBCO记忆器中观察到强大的双极切换.
- 识别了温度独立的 SET 和 RESET 电压.
- 通过浅层和深层陷在缺氧接口调节的受陷控制的空间电荷有限导电.
- 揭示了无氧化界面层的形成,使电静电控制能够对场诱导的金属绝缘体过渡进行控制.
结论:
- 提出了一种涉及CuO链碎片化的双陷模型,以解释非挥发性切换.
- 突出了动态陷状态在 cuprate memristor 功能中的关键作用.
- 表明了这些memristors对于与超导电路集成的冷神经形态计算平台的潜力.
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